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december 2015 docid028723 rev 1 1 / 16 this is information on a product in full production. www.st.com stp27n60m2 - ep, stw27n60m2 - ep n - channel 600 v, 0.150 typ., 20 a mdmesh? m2 ep power mosfets in to - 220 and to - 247 packages datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d stp27n60m2 - ep 600 v 0.163 20 a stw27n60m2 - ep 600 v 0.163 20 a ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? very low turn - off switching losses ? 100% avalanche tested ? zener - protected applications ? switching applications ? tailored for very high frequency converters (f > 150 khz) description these devices are n - channel power mosfets developed using mdmesh? m2 ep enhanced performance technology. thanks to their strip layout and an improved vertical structure, these devices exhibit low on - resistance, optimized switc hing characteristics with very low turn - off switching losses, rendering them suitable for the most demanding very high frequency converters. table 1: device summary order code marking package packaging stp27n60m2 - ep 27n60m2ep to - 220 tube stw27n60m2 - ep to - 247 1 2 3 t o-247 1 2 3 tab t o-220
contents stp27n60m2 - ep, stw27n60m2 - ep 2 / 16 docid028723 rev 1 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package information ................................ ................................ ..... 10 4.1 to - 220 type a package information ................................ ................ 11 4.2 to - 247 pack age information ................................ ........................... 13 5 revision history ................................ ................................ ............ 15
stp27n60m2 - ep, stw27n60m2 - ep electrical ratings docid028723 rev 1 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t c = 25 c 20 a i d drain current (continuous) at t c = 100 c 13 a i dm (1) drain current (pulsed) 80 a p tot total dissipation at t c = 25 c 170 w dv/dt (2) peak diode recovery voltage slope 15 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) pulse width limited by safe operating area. (2) i sd 20 a, di/dt 400 a/s; v ds(peak) < v (br)dss , v dd = 400 v. (3) v ds 480 v table 3: thermal data symbol parameter value unit to - 220 to - 247 r thj - case thermal resistance junction - case max 0.74 c/w r thj - amb thermal resistance junction - ambient max 62.5 50 c/w table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 3.6 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd = 50 v) 260 mj
electrical characteristics stp27n60m2 - ep, stw27n60m2 - ep 4 / 16 docid028723 rev 1 2 electrical characteristics t c = 25 c unless otherwise specified table 5: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t c = 125 c 100 a i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 10 a 0.150 0.163 ? table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 1320 - pf c oss output capacitance - 70 - pf c rss reverse transfer capacitance - 1 - pf c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 146 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 4 - ? q g total gate charge v dd = 480 v, i d = 20 a, v gs = 10 v (see figure 17: "test circuit for gate charge behavior" ) - 33 - nc q gs gate - source charge - 5.2 - nc q gd gate - drain charge - 16 - nc notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 10 a, r g = 4.7 , v gs = 10 v (see figure 16: "test circuit for resistive load switching times" and figure 21: "switching time waveform" ) - 13.4 - ns t r rise time - 8.1 - ns t d(off) turn - off - delay time - 55.6 - ns t f fall time - 6.3 - ns
stp27n60m2 - ep, stw27n60m2 - ep electrical characteristics docid028723 rev 1 5 / 16 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 20 a i sdm (1) source - drain current (pulsed) - 80 a v sd (2) forward on voltage v gs = 0 v, i sd = 20 a - 1.6 v t rr reverse recovery time i sd = 20 a, di/dt = 100 a/s, v dd = 60 v (see figure 21: "switching time waveform" ) - 271 ns q rr reverse recovery charge - 3.44 c i rrm reverse recovery current - 25.4 a t rr reverse recovery time i sd = 20 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 21: "switching time waveform" ) - 352 ns q rr reverse recovery charge - 4.82 c i rrm reverse recovery current - 27.4 a notes: (1) pulse width is limited by safe operating area (2) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical chara cteristics stp27n60m2 - ep, stw27n60m2 - ep 6 / 16 docid028723 rev 1 2.1 electrical characteristics (curves) figure 2 : safe operating area for to - 220 figure 3 : thermal impedance for to - 220 figure 4 : safe operating area for to - 247 figure 5 : thermal impedance for to - 247 figure 6 : output characteristics figure 7 : transfer characteristics k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -4 10 -5 10 -3 10 -2 10 -1 t p (s) 0.2 0.1 0.05 0.02
stp27n60m2 - ep, stw27n60m2 - ep electrical characteristics docid028723 rev 1 7 / 16 figure 8 : gate charge vs gate - source voltage figure 9 : static drain - source on - resistance figure 10 : capacitance variation s figure 11 : output capacitance stored energy figure 12 : normalized v(br)dss vs temperature figure 13 : normalized gate threshold voltage vs temperature
electrical characteristics stp27n60m2 - ep, stw27n60m2 - ep 8 / 16 docid028723 rev 1 figure 14 : normalized on - resistance vs temperature figure 15 : source - drain diode forward characteristics
stp27n60m2 - ep, stw27n60m2 - ep test circuits docid028723 rev 1 9 / 16 3 test circuits figure 16 : test circuit for resistive load switching times figure 17 : test circuit for gate charge behavior figure 18 : test circuit for inductive load switching and diode recovery times figure 19 : unclamped inductive load test circuit figure 20 : unclamped inductive waveform figure 21 : switching time waveform
package information stp27n60m2 - ep, stw27n60m2 - ep 10 / 16 docid028723 rev 1 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
stp27n60m2 - ep, stw27n60m2 - ep package information docid028723 rev 1 11 / 16 4.1 to - 220 type a package information figure 22 : to - 220 type a package outline
package information stp27n60m2 - ep, stw27n60m2 - ep 12 / 16 docid028723 rev 1 table 9: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
stp27n60m2 - ep, stw27n60m2 - ep package information docid028723 rev 1 13 / 16 4.2 to - 247 package information figure 23 : to - 247 package outline
package information stp27n60m2 - ep, stw27n60m2 - ep 14 / 16 docid028723 rev 1 table 10: to - 247 package mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
stp27n60m2 - ep, stw27n60m2 - ep revision history docid028723 rev 1 15 / 16 5 revision history table 11: document revision history date revision changes 15 - dec - 2015 1 first release.
stp27n60m2 - ep, stw27n60m2 - ep 16 / 16 docid028723 rev 1 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers s hould obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provi sions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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